Data storage in analog memory cells across word lines using a non-integer number of bits per cell

ABSTRACT

A method for data storage includes accepting data for storage in an array of analog memory cells, which are arranged in rows associated with respective word lines. At least a first page of the data is stored in a first row of the array, and at least a second page of the data is stored in a second row of the array, having a different word line from the first row. After storing the first and second pages, a third page of the data is stored jointly in the first and second rows.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/192,501, filed Jul. 28, 2011, which claims the benefit of U.S.Provisional Patent Application 61/369,667, filed Jul. 31, 2010, and U.S.Provisional Patent Application 61/475,241, filed Apr. 14, 2011, whosedisclosures are incorporated herein by reference. This application isrelated to a U.S. patent application entitled “Data storage in analogmemory cells using a non-integer number of bits per cell”, filed on evendate, whose disclosure is incorporated herein by reference.

FIELD OF THE INVENTION

Embodiments described herein are related to the field of data storage,and particularly to methods and systems for storing data in analogmemory cells.

BACKGROUND OF THE INVENTION

Several types of memory devices, such as Flash memories, use arrays ofanalog memory cells for storing data. Each analog memory cell stores aquantity of an analog value, also referred to as a storage value, suchas an electrical charge or voltage. This analog value represents theinformation stored in the cell. In Flash memories, for example, eachanalog memory cell holds a certain amount of electrical charge. Therange of possible analog values is typically divided into intervals,each interval corresponding to one or more data bit values. Data iswritten to an analog memory cell by writing a nominal analog value thatcorresponds to the desired bit or bits.

Some memory devices, commonly referred to as Single-Level Cell (SLC)devices, store a single bit of information in each memory cell, i.e.,each memory cell can be programmed to assume two possible programminglevels. Higher-density devices, often referred to as Multi-Level Cell(MLC) devices, store two or more bits per memory cell, i.e., can beprogrammed to assume more than two possible programming levels.

Flash memory devices are described, for example, by Bez et al., in“Introduction to Flash Memory,” Proceedings of the IEEE, volume 91,number 4, April, 2003, pages 489-502, which is incorporated herein byreference. Multi-level Flash cells and devices are described, forexample, by Eitan et al., in “Multilevel Flash Cells and theirTrade-Offs,” Proceedings of the 1996 IEEE International Electron DevicesMeeting (IEDM), New York, N.Y., pages 169-172, which is incorporatedherein by reference. The paper compares several kinds of multilevelFlash cells, such as common ground, DINOR, AND, NOR and NAND cells.

Eitan et al., describe another type of analog memory cell called NitrideRead Only Memory (NROM) in “Can NROM, a 2-bit, Trapping Storage NVMCell, Give a Real Challenge to Floating Gate Cells?” Proceedings of the1999 International Conference on Solid State Devices and Materials(SSDM), Tokyo, Japan, Sep. 21-24, 1999, pages 522-524, which isincorporated herein by reference. NROM cells are also described byMaayan et al., in “A 512 Mb NROM Flash Data Storage Memory with 8 MB/sData Rate,” Proceedings of the 2002 IEEE International Solid-StateCircuits Conference (ISSCC 2002), San Francisco, Calif., Feb. 3-7, 2002,pages 100-101, which is incorporated herein by reference. Otherexemplary types of analog memory cells are Floating Gate (FG) cells,Ferroelectric RAM (FRAM) cells, magnetic RAM (MRAM) cells, Charge TrapFlash (CTF) and phase change RAM (PRAM, also referred to as Phase ChangeMemory—PCM) cells. FRAM, MRAM and PRAM cells are described, for example,by Kim and Koh in “Future Memory Technology including Emerging NewMemories,” Proceedings of the 24^(th) International Conference onMicroelectronics (MIEL), Nis, Serbia and Montenegro, May 16-19, 2004,volume 1, pages 377-384, which is incorporated herein by reference.

Some storage schemes store data at a density having a non-integer numberof bits per memory cell. For example, U.S. Pat. No. 7,071,849, whosedisclosure is incorporated herein by reference, describes fractional-bitsystems that allow increments of the number of states per cell by aslittle as one between product generations. Because the number of statesper cell is not an integer power of two, the number of bits per celltakes a fractional value. Cells are typically decoded in unit of word,and the system efficiency can be optimized by adjusting the word-width.

As another example, U.S. Pat. No. 6,646,913, whose disclosure isincorporated herein by reference, describes a method for storing andreading data in a multilevel nonvolatile memory having a memory arrayformed by a plurality of memory cells. Each of the memory cells stores anumber of bits that is not an integer power of two. In this way, onedata byte is stored in a non-integer number of memory cells. Themanaging method includes storing, in the same clock cycle, a data wordformed by a plurality of bytes, by programming a preset number ofadjacent memory cells. Reading is performed by reading the stored dataword in the same clock cycle.

SUMMARY OF THE INVENTION

An embodiment of the present invention that is described herein providesa method for data storage. The method includes accepting data forstorage in an array of analog memory cells, which are arranged in rowsassociated with respective word lines. At least a first page of the datais stored in a first row of the array, and at least a second page of thedata is stored in a second row of the array, having a different wordline from the first row. After storing the first and second pages, athird page of the data is stored jointly in the first and second rows.

In some embodiments, storing the third page includes selectingrespective programming levels at least for one memory cell in the firstrow and one memory cell in the second row based on a given bit value ofthe third page. In an embodiment, storing the third page includesstoring a given bit of the third page by: selecting a first programminglevel for a first memory cell in the first row based on the given bit ofthe third page and on a corresponding first bit of the first page;selecting a second programming level for a second memory cell in thesecond row based on the given bit of the third page and on acorresponding second bit of the second page; and programming the firstand second memory cells to the selected first and second programminglevels, respectively.

In another embodiment, storing the third page includes storing a givenbit of the third page by: selecting a first programming level for afirst memory cell in the first row, and a second programming level for asecond memory cell in the second row, based on the given bit of thethird page, on a corresponding first bit of the first page and on acorresponding second bit of the second page; and programming the firstand second memory cells to the selected first and second programminglevels, respectively. In yet another embodiment, storing the first,second and third pages includes executing respective, different first,second and third page programming commands.

In a disclosed embodiment, the method includes performing at least onestorage operation in a third row, which neighbors the first row or thesecond row, after storing the first page and before storing the thirdpage. In still another embodiment, storing the third page includesprogramming the memory cells in the first and second row using a numberof programming levels that is not an integer power of two. In anembodiment, each of the memory cells is programmable to a respective setof programming levels, and storing the third page includes selecting theprogramming levels at least for a first memory cell in the first row anda second memory cell in the second row from a partial subset of possiblecombinations of the programming levels of the first and second memorycells.

There is additionally provided, in accordance with an embodiment of thepresent invention, a method for data storage including accepting datafor storage in an array of analog memory cells, which are arranged inrows associated with respective word lines. Bit values of the data aremapped to programming levels of the analog memory cells, such that atleast one bit value is encoded by the programming levels of at least twoanalog memory cells belonging to different, respective word lines of thearray. The data is stored by programming the analog memory cells to theprogramming levels mapped to the bit values.

In some embodiments, accepting the data includes accepting at leastfirst, second and third pages, and mapping the bit values includesmapping corresponding bit values of the first and third pages torespective programming levels for the memory cells in a first word line,and mapping corresponding bit values of the second and third pages torespective programming levels for the memory cells in a second wordline, different from the first word line. In an embodiment, storing thedata includes programming the analog memory cells belonging to thedifferent word lines using respective, different page programmingcommands. In another embodiment, a number of the programming levels isnot an integer power of two.

There is also provided, in accordance with an embodiment of the presentinvention, a method for data storage including accepting and bufferingsecond data for storage in an array of analog memory cells, which arearranged in rows associated with respective word lines and in whichfirst data is potentially already stored. The buffered second data isstored in a given row of the array by: assessing a first size of thefirst data that is potentially already stored in the given row;assessing a second size of the second data that is buffered for storage;selecting a programming operation from among multiple predefinedprogramming operations depending on the first and second sizes; andstoring the buffered second data in the given row using the selectedprogramming operation.

In some embodiments, assessing the first and second sizes includesidentifying the first and second sizes at a granularity of half a pageof the data. In a disclosed embodiment, at least one of the predefinedprogramming operations stores a full page of the data in the given rowwhen the given row already holds half a page of the data.

There is further provided, in accordance with an embodiment of thepresent invention, apparatus for data storage including a memory andstorage circuitry. The memory includes an array of analog memory cellsthat are arranged in rows associated with respective word lines. Thestorage circuitry is configured to accept data for storage in the array,to store at least a first page of the data in a first row of the array,to store at least a second page of the data in a second row of thearray, having a different word line from the first row, and, afterstoring the first and second pages, to store a third page of the datajointly in the first and second rows.

There is moreover provided, in accordance with an embodiment of thepresent invention, apparatus for data storage including a memory andstorage circuitry. The memory includes an array of analog memory cellsthat are arranged in rows associated with respective word lines. Thestorage circuitry is configured to accept data for storage in the array,to map bit values of the data to programming levels of the analog memorycells, such that at least one bit value is encoded by the programminglevels of at least two analog memory cells belonging to different,respective word lines of the array, and to store the data by programmingthe analog memory cells to the programming levels mapped to the bitvalues.

There is additionally provided, in accordance with an embodiment of thepresent invention, apparatus for data storage including a memory andstorage circuitry. The memory includes an array of analog memory cellsthat are arranged in rows associated with respective word lines. Thestorage circuitry is configured to accept and buffer second data forstorage in the array while first data is potentially already stored inthe array, and to store the buffered second data in a given row of thearray by assessing a first size of the first data that is potentiallyalready stored in the given row, assessing a second size of the seconddata that is buffered for storage, selecting a programming operationfrom among multiple predefined programming operations depending on thefirst and second sizes, and storing the buffered second data in thegiven row using the selected programming operation.

The present invention will be more fully understood from the followingdetailed description of the embodiments thereof, taken together with thedrawings in which:

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram that schematically illustrates a memorysystem, in accordance with an embodiment of the present invention;

FIG. 2 is a graph showing programming levels of memory cells belongingto two word lines, in accordance with an embodiment of the presentinvention;

FIG. 3 is a flow chart that schematically illustrates a method forstoring three data pages in memory cells belonging to two word lines, inaccordance with an embodiment of the present invention;

FIG. 4 is a diagram that schematically illustrates a process of storingthree data pages in memory cells belonging to two word lines, inaccordance with an embodiment of the present invention;

FIG. 5 is a state diagram that schematically illustrates a process ofstoring data across multiple word lines, in accordance with anembodiment of the present invention;

FIG. 6 is a graph showing a process of storing data using a non-integernumber of bits per memory cell, in accordance with another embodiment ofthe present invention;

FIG. 7 is a flow chart that schematically illustrates a method for datastorage using a non-integer number of bits per memory cell, inaccordance with an embodiment of the present invention;

FIG. 8 is a flow chart that schematically illustrates a method forreadout of data that is stored using a non-integer number of bits permemory cell, in accordance with an embodiment of the present invention;

FIG. 9 is a graph showing a process of storing data using a non-integernumber of bits per memory cell, in accordance with yet anotherembodiment of the present invention;

FIG. 10 is a diagram that schematically illustrates a process of storingthree data pages in memory cells belonging to two word lines, inaccordance with an alternative embodiment of the present invention; and

FIG. 11 is a graph showing storage of data using a non-integer number ofbits per memory cell, in accordance with another embodiment of thepresent invention.

DETAILED DESCRIPTION OF EMBODIMENTS Overview

Storing data in analog memory cells at a non-integer number of bits permemory cell means that the storage process is not constrained to use anumber of programming levels that is an integer power of two. The finergranularity in defining the programming levels enables betterexploitation of the capacity of the memory cells.

On the other hand, storing data in this manner sometimes collides withoperating conventions of analog memory devices, such as maintaining astandard page size, storing multiple separate pages in each word line,and reducing interference by programming word lines in a gradual,alternating order. Storage at a non-integer number of bits per cell mayalso increase the size of memory buffers used in the storage process.

Embodiments of the present invention provide improved methods andsystems for data storage, which reduce or eliminate the performancedegradation that is conventionally associated with storage at anon-integer number of bits per memory cell.

In some embodiments, a memory system accepts data pages for storage inan array of analog memory cells. The system stores a first page in oneword line (row) of the array, a second page in another word line, and athird page jointly in the two word lines. In a typical embodiment, jointstorage means that each bit of the third page determines the programminglevels in a respective pair of memory cells, one memory cell in eachword line. These techniques enable the system to increase storagedensity while maintaining a standard page size. This scheme may beapplied not only in storing three pages in two word lines as in theabove example, but also to storing larger numbers of pages per wordline.

In other disclosed embodiments, the memory system selects how to storedata in a given word line depending on (i) the size of the data that isalready stored in the given word line and (ii) the size of the data thatis currently buffered and pending for storage. Based on these two datasizes, the system selects a programming operation from a set of possibleoperations, and stores the pending data using the selected operation.The programming operation may involve storing a non-integer number ofbits per cell in the word line. In an example embodiment, the data sizesare assessed at a granularity of half a page. In at least one of thepossible programming operations, a full page of data is programmed in aword line that already holds half a page. These techniques can becombined with alternating word line programming orders, so as to reduceinterference.

In some disclosed embodiments, the memory system stores data in a groupof analog memory cells using a two-phase process. In the first phase,the system programs the memory cells in the group to a set of initialprogramming levels, whose size is typically an integer power of two. Inthe second phase, the system stores additional data, but only in thosememory cells that were programmed in the first phase to certain specificinitial programming levels in a certain predefined partial subset of theinitial programming levels.

The second phase thus produces one or more additional programming levelsthat are different from the initial programming levels. The aggregatenumber of the initial and additional programming levels is typically notan integer power of two. Several example programming and readout schemesof this sort are described. These techniques approach the theoreticalcapacity of the memory cells, and at the same time enable efficientinterference mitigation and require only modest buffering.

System Description

FIG. 1 is a block diagram that schematically illustrates a memory system20, in accordance with an embodiment of the present invention. System 20can be used in various host systems and devices, such as in computingdevices, cellular phones or other communication terminals, removablememory modules (e.g., “disk-on-key” or “Flash drive” devices), SolidState Disks (SSD), digital cameras, music and other media players and/orany other system or device in which data is stored and retrieved.

System 20 comprises a memory device 24, which stores data in a memorycell array 28. The memory array comprises multiple analog memory cells32. In the context of the present patent application and in the claims,the term “analog memory cell” is used to describe any memory cell thatholds a continuous, analog value of a physical parameter, such as anelectrical voltage or charge. Array 32 may comprise solid-state analogmemory cells of any kind, such as, for example, NAND, NOR and ChargeTrap Flash (CTF) Flash cells, phase change RAM (PRAM, also referred toas Phase Change Memory—PCM), Nitride Read Only Memory (NROM),Ferroelectric RAM (FRAM), magnetic RAM (MRAM) and/or Dynamic RAM (DRAM)cells. Although the embodiments described herein refer mainly to analogmemory, the disclosed techniques may also be used with various othermemory types.

The charge levels stored in the cells and/or the analog voltages orcurrents written into and read out of the cells are referred to hereincollectively as analog values, storage values or analog storage values.Although the embodiments described herein mainly address thresholdvoltages, the methods and systems described herein may be used with anyother suitable kind of storage values.

System 20 stores data in the analog memory cells by programming thecells to assume respective memory states, which are also referred to asprogramming levels. The programming levels are selected from a finiteset of possible levels, and each level corresponds to a certain nominalstorage value. For example, a 2 bit/cell MLC can be programmed to assumeone of four possible programming levels by writing one of four possiblenominal storage values into the cell. The techniques described hereinmainly address storage densities of a non-integer number of bits permemory cell, i.e., a number of programming levels per cell that is notan integer power of two.

Memory device 24 comprises a reading/writing (R/W) unit 36, whichconverts data for storage in the memory device to analog storage valuesand writes them into memory cells 32. In alternative embodiments, theR/W unit does not perform the conversion, but is provided with voltagesamples, i.e., with the storage values for storage in the cells. Whenreading data out of array 28, R/W unit 36 converts the storage values ofmemory cells 32 into digital samples having a resolution of one or morebits. Data is typically written to and read from the memory cells ingroups that are referred to as pages. In some embodiments, the R/W unitcan erase a group of cells 32 by applying one or more negative erasurepulses to the cells.

The storage and retrieval of data in and out of memory device 24 isperformed by a memory controller 40. Memory controller 40 comprises aninterface 44 for communicating with memory device 24, and a processor48. The disclosed techniques can be carried out by memory controller 40,by R/W unit 36, or both. Thus, in the present context, memory controller40 and R/W unit 36 are referred to collectively as storage circuitrythat carries out the disclosed techniques.

Memory controller 40 communicates with a host 52, for accepting data forstorage in the memory device and for outputting data retrieved from thememory device. Memory controller 40 may be implemented in hardware,e.g., using one or more Application-Specific Integrated Circuits (ASICs)or Field-Programmable Gate Arrays (FPGAs). Alternatively, the memorycontroller may comprise a microprocessor that runs suitable software, ora combination of hardware and software elements.

The configuration of FIG. 1 is an example system configuration, which isshown purely for the sake of conceptual clarity. Any other suitablememory system configuration can also be used. For example, although theexample of FIG. 1 shows a single memory device, in alternativeembodiments memory controller 40 may control multiple memory devices 24.Elements that are not necessary for understanding the principles of thepresent invention, such as various interfaces, addressing circuits,timing and sequencing circuits and debugging circuits, have been omittedfrom the figure for clarity.

In the example system configuration shown in FIG. 1, memory device 24and memory controller 40 are implemented as two separate IntegratedCircuits (ICs). In alternative embodiments, however, the memory deviceand the memory controller may be integrated on separate semiconductordies in a single Multi-Chip Package (MCP) or System on Chip (SoC), andmay be interconnected by an internal bus. Further alternatively, some orall of the memory controller circuitry may reside on the same die onwhich the memory array is disposed. Further alternatively, some or allof the functionality of memory controller 40 can be implemented insoftware and carried out by a processor or other element of the hostsystem. In some embodiments, host 44 and memory controller 40 may befabricated on the same die, or on separate dies in the same devicepackage.

In some embodiments, memory controller 40 comprises a general-purposeprocessor, which is programmed in software to carry out the functionsdescribed herein. The software may be downloaded to the processor inelectronic form, over a network, for example, or it may, alternativelyor additionally, be provided and/or stored on non-transitory tangiblemedia, such as magnetic, optical, or electronic memory.

In an example configuration of array 28, memory cells 32 are arranged inmultiple rows and columns, and each memory cell comprises afloating-gate transistor. The gates of the transistors in each row areconnected by word lines, and the sources of the transistors in eachcolumn are connected by bit lines. In the present context, the term“row” is used in the conventional sense to mean a group of memory cellsthat are fed by a common word line, and the term “column” means a groupof memory cells fed by a common bit line. The terms “row” and “column”do not connote a certain physical orientation of the memory cellsrelative to the memory device. The memory array is typically dividedinto multiple memory pages, i.e., groups of memory cells that areprogrammed and read simultaneously.

In some embodiments, memory pages are sub-divided into sectors. Pagesmay be mapped to word lines in various manners. Each word line may storeone or more pages. A given page may be stored in all the memory cells ofa word line, or in a subset of the memory cells (e.g., the odd-order oreven-order memory cells).

Erasing of cells is usually carried out in blocks that contain multiplepages. Typical memory devices may comprise thousands of erasure blocks.In a typical two-bit-per-cell MLC device, each erasure block is on theorder of 32 word lines, each comprising several tens of thousands ofcells. Each word line of such a device is often partitioned into fourpages (odd/even order cells, least/most significant bit of the cells).Three-bit-per cell devices having 32 word lines per erasure block wouldhave 192 pages per erasure block, and four-bit-per-cell devices wouldhave 256 pages per block. Alternatively, other block sizes andconfigurations can also be used. Some memory devices comprise two ormore separate memory cell arrays, often referred to as planes. Sinceeach plane has a certain “busy” period between successive writeoperations, data can be written alternately to the different planes inorder to increase programming speed.

Data Storage Across Word Lines Using a Non-Integer Number of Bits PerMemory Cell

In some embodiments, system 20 stores data in memory cells 32 of array28 at a storage density of a non-integer number of bits per memory cell,i.e., using a number of programming levels that is not an integer powerof two. Such programming schemes enable the system to better exploit thecapacity of the memory cells. For example, certain memory cells may notenable reliable storage using four programming levels per cell (2bits/cell) but do enable reliable storage using three programming levelsper cell (1.5 bits/cell).

Storage using a non-integer number of bits per cell sometimes collideswith operating conventions of analog memory devices, such as standardpage size, storage of multiple independently-programmed pages in eachword line, or programming orders of word lines for reducinginterference. The disclosed techniques resolve this apparentcontradiction.

In some embodiments described below, system 20 achieves a non-integernumber of bits per cell by jointly defining the programming levels ofthe memory cells across multiple word lines. In other words, whenmapping the data bit values to memory cell programming levels, at leastone bit value is encoded by the programming levels of at least twoanalog memory cells belonging to different, respective word lines. In atypical embodiment, at least a first page is stored in memory cells ofone word line, at least a second page is stored in memory cells ofanother word line, and, at a later point in time, a third page is storedjointly in memory cells of both word lines.

Joint mapping of bit values to programming levels for correspondingmemory cells in different word lines (rather than for multiple memorycells in the same word line) can be implemented using simple logichardware or software while preserving the storage conventions of thememory device. Typically, different word lines are programmed usingdifferent page programming commands. Thus, the memory cells whoseprogramming levels are affected by this joint mapping are typicallyprogrammed using different page programming commands.

FIGS. 2-4 below show an example embodiment in which three data pages arestored in the memory cells of two word lines of array 28, using threeprogramming levels per cell (1.5 bits/cell).

FIG. 2 is a graph showing programming levels of memory cells belongingto two word lines, in accordance with an embodiment of the presentinvention. The two word lines in question are denoted WL1 and WL2. Eachmemory cell can be programmed to one of three possible programminglevels denoted L0, L1 and L2. L0 also serves as the erased level, i.e.,erased memory cells are set to this level. Each of the three programminglevels occupies a respective range of threshold voltages (V_(TH)) asseen in the figure. Typically although not necessarily, L0 occupies arange of negative threshold voltages while L1 and L2 occupy ranges ofpositive threshold voltages.

System 20 stores three data pages in two word lines of this sort. Afirst data page is stored in WL1, one bit in each memory cell, usinglevels L0 and L1. A second data page is stored in WL2 in a similarmanner, one bit in each memory cell, using levels L0 and L1. A thirddata page is stored jointly in WL1 and WL2, one bit in every pair ofcorresponding memory cells in the two word lines, using all three levelsL0, L1 and L2.

FIG. 3 is a flow chart that schematically illustrates a method forstoring three data pages in memory cells belonging to two word lines, inaccordance with an embodiment of the present invention. The methodbegins with memory controller 40 accepting three data pages for storage,at an input step 60. The memory controller stores the first and seconddata pages in word lines WL1 and WL2, respectively, at a first storagestep 64. This storage step uses only programming levels L0 and L1. In anexample embodiment, one data bit is stored in each memory cell, suchthat “0” bit value is mapped to level L0 and “1” bit value is mapped tolevel L1. This programming step is referred to herein as LeastSignificant Bit (LSB) programming of the two word lines.

The memory controller then programs the third data page jointly in thememory cells of the two word lines, at a second programming step 68.This programming step is referred to herein as Half Most Significant Bit(HMSB) programming of the two word lines. After LSB programming andbefore HMSB programming, each memory cell in WL1 and WL2 is alreadyLSB-programmed using levels L0 and L1. The memory controller nowre-programs word lines WL1 and WL2, using all three programming levelsL0 . . . L2, such that each bit of the third data page defines theprogramming levels in a respective pair of corresponding memory cells inWL1 and WL2.

In this scheme, the programming level of the n^(th) memory cell of WL1depends on the value of the n^(th) bit of the first data page (which wasalready programmed at step 64 above) and on the value of the n^(th) bitof the third data page. The programming level of the n^(th) memory cellof WL2 depends on the value of the n^(th) bit of the second data page(which was programmed at step 64 above) and on the value of the n^(th)bit of the third data page. Thus, the value of the n^(th) bit of thethird data page determines the programming levels of both the n^(th)memory cell of WL1 and the n^(th) memory cell of WL2.

When implementing the programming scheme of FIGS. 2 and 3, various typesof mapping between bit values and programming levels can be used for theLSB and HMSB programming steps. Typically, however, the thresholdvoltages of analog memory cells 32 can only be increased when carryingout the HMSB programming. Thus, the HMSB programming scheme is typicallypermitted only to leave a memory cell at its present programming levelor shift it to a higher programming level.

In alternative embodiments, the mapping of the bit values of the thirddata page to the programming levels of WL1 and WL2 is not separable. Inother words, the programming level of the n^(th) memory cells in bothWL1 and WL2 depend on (i) the value of the n^(th) bit of the first datapage, (ii) the value of the n^(th) bit of the second data page, and(iii) the value of the n^(th) bit of the third data page.

FIG. 4 is a diagram that schematically illustrates an example mapping ofbit values to programming levels in the LSB and HMSB programming steps,in accordance with an embodiment of the present invention. The left handside of the figure shows the threshold voltages (and correspondingprogramming levels) of the memory cells in WL1 and WL2 after LSBprogramming. For each pair of corresponding memory cells in WL1 and WL2(i.e., the n^(th) memory cell in WL1 and the n^(th) memory cell in WL2),the threshold voltages of the two memory cells are shown as points 72 ina two-dimensional space. The horizontal axis shows the threshold voltageof the memory cell belonging to WL1, and the vertical axis shows thethreshold voltage of the memory cell belonging to WL2.

This example mapping is defined by the following table:

1^(st) Page bit value 2^(nd) page bit value WL1 cell level WL2 celllevel 0 0 L0 L0 0 1 L0 L1 1 0 L1 L0 1 1 L1 L1

As can be seen in the table, the first and second data pages are storedindependently into WL1 and WL2, respectively.

The right hand side of FIG. 4 shows the threshold voltages (andcorresponding programming levels) of the memory cells in WL1 and WL2after LSB and HMSB programming. At this stage, the bits of the thirddata page are programmed into respective pairs of corresponding memorycells in WL1 and WL2. The threshold voltages of the pairs of memorycells are shown as points 76 in the two-dimensional space.

The mapping of bit values to programming levels is defined by thefollowing table:

3^(rd) page bit {1^(st) page bit, 2^(nd) page bit} “0” “1” “00” {L0, L0}{L0, L2} “01” {L0, L1} {L2, L1} “10” {L1, L0} {L2, L0} “11” {L1, L1}{L1, L2}

The table gives the programming levels in the n^(th) pair ofcorresponding WL1 and WL2 memory cells, as a function of the n^(th) bitof the first, second and third data pages. When retrieving data from thememory cells, the three bit values can be read from a pair of WL1 andWL2 memory cells using the following inverse mapping:

WL2 cell level WL1 cell level L0 L1 L2 L0 “000” “010” “001” L1 “100”“110” “111” L2 “101” “011” Unused

Typically, R/W unit 36 reads the three bit values from a pair of WL1 andWL2 memory cells by comparing the threshold values of the memory cellsto certain read thresholds. When using the above-described mapping, thebit values can be recovered using the following threshold comparisons:

LSB1=Cell1>X&˜([Cell1>Y&Cell2>X])

LSB2=Cell2>X&˜([Cell1<X&Cell2>Y])

MSB=Cell1>Y|Cell2>Y

wherein LSB1 and LSB2 denote the bit values of the first and second datapages, respectively, MSB denotes the bit value of the third data page,Cell1 and Cell2 denote the threshold voltages of the WL1 and WL2 cells,respectively, X denotes the read threshold that differentiates betweenprogramming levels L0 and L1, Y denotes the read threshold thatdifferentiates between programming levels L1 and L2, and &, | and ˜denote logical AND, OR and NOT operations, respectively.

In the present example, each individual data page can be read using twoor three comparisons, i.e., two or three sense operations. All threedata pages can be read using four comparisons i.e., four senseoperations (two sense operations for each word line, one at threshold Xand the other at threshold Y).

The mapping of bit values to programming levels shown in FIG. 4 isdepicted purely by way of example. In alternative embodiments, any othersuitable mapping can be used. The mapping can be selected depending onvarious criteria, such as, for example, minimizing the usage of level L2in order to reduce the stress on the memory cells, or minimizinginterference between word lines. Another example criterion is to choosethe mapping as close as possible to Gray mapping, i.e., to minimize thenumber of bit differences between neighboring points 76 in theright-hand-side diagram of FIG. 4. Such a mapping would reduce bit errorrate during data readout. The scheme of FIGS. 2-4 can be used withvarious page sizes. In an example embodiment each page comprises 8192bytes (65536 bits), although any other suitable page size can be used inalternative embodiments.

The programming scheme of FIGS. 2-4 is an example scheme that is chosenpurely for the sake of conceptual clarity. Alternatively, any othersuitable programming scheme, in which at least a given bit value definesthe programming levels of at least two memory cells belonging todifferent word lines, can be used. For example, a given bit value maydefine the programming levels of multiple memory cells belonging to morethan two word lines. More generally, programming schemes that jointlymap n bit values into m word lines can also be used.

In the example of FIGS. 2-4 the data is stored at a density of 1.5bits/cell using a set of three programming levels. In alternativeembodiments, any other suitable storage density and any other suitablenumber of programming levels can be used. An alternative programmingscheme is shown in FIG. 10 further below. As yet another example, analternative programming scheme may be defined with a set of sixprogramming levels. Using such a scheme, a total of five data pages canbe programmed into two word lines. The first four data pages areprogrammed using four programming levels, two pages into each word line.The fifth page is programmed jointly into the two word lines using allsix programming levels.

In some embodiments, for a given pair of word lines, the HMSBprogramming (step 68 of FIG. 3) is performed immediately following LSBprogramming (step 64 of FIG. 3). This scheme reduces the need forbuffering data in the memory controller or in the memory device. On theother hand, this scheme may be sub-optimal with respect to interferencereduction, because it may apply large threshold voltage changes in thetwo word lines while neighboring word lines are not yet programmed.

In alternative embodiments, after performing LSB programming in a givenpair of word lines, the HMSB programming in these word lines ispostponed until one or more other neighboring word lines areLSB-programmed. This scheme reduces interference between word lines, butmay require buffering of the HMSB data (the third data page to be storedusing HMSB programming).

Storage at a Non-Integer Number of Bits Per Memory Cell Using Half-PageGranularity

In some embodiments, system 20 stores data in memory device 24 at agranularity of half a page. The system may choose to store either half apage or a full page of data in a given word line, depending on theamount of data that is already stored in this word line, and on theamount of data that is buffered and pending for storage. The buffereddata may be buffered in any suitable buffer memory (not shown) in memorycontroller 40 and/or memory device 24.

In these embodiments, when preparing to store data in a given word line,the system assesses the data size that is already stored in the wordline (e.g., none, half a page, a full page or 1.5 pages) and the datasize that is buffered for storage (e.g., half a page or a full page).The system chooses an appropriate programming operation, from among aset of predefined programming operations, based on these twoassessments. In particular, as will be shown below, at least one of thepredefined storage operations programs a full page of data into a wordline that currently holds half a page.

In the description that follows, the terms “a word line holding half apage” and “a word line programmed with Half-LSB (HLSB)” are usedinterchangeably, the terms “a word line holding a full page” and “aLSB-programmed word line” are used interchangeably, and the terms “aword line holding 1.5 pages” and “a word line programmed with LSB+HMSB”are used interchangeably.

Storing data in this manner enables considerable flexibility in applyingalternating programming orders among word lines, in order to reduceinterference. For example, the disclosed technique can be used forstoring data in a memory device in which the programming order of wordlines is pre-dictated. At the same time, the disclosed technique reducesthe buffer size used for buffering the data that is pending for storage.

FIG. 5 is a state diagram that schematically illustrates a process ofstoring data using a non-integer number of bits per memory cell acrossmultiple word lines, in accordance with an embodiment of the presentinvention. According to the state model of FIG. 5, a given word line maybe in one of four states denoted 80A . . . 80D. States 80A . . . 80Dcorrespond to the four possible data sizes that may already be stored inthe memory cells of the word line: None, half a page, a full page, and1.5 pages, respectively.

Six state transitions denoted 84A . . . 84F are defined between thestates. Each transition corresponds to a respective programmingoperation that programs the memory cells of the word line from a certainstate to another state. When preparing to store data in a given wordline, system 20 checks the amount of data that the word line alreadyholds i.e., determines the current state of the word line. Based on theamount of data that is buffered for storage, the system chooses theappropriate state transition, i.e., the appropriate programmingoperation.

In the example embodiment of FIG. 5, the system chooses the programmingoperation from a set of six possible programming operations thatcorrespond to six cases, in accordance with the following table:

Case # Current WL state Size of buffered data 1 80A - not programmedFull page 2 80A - not programmed Half page 3 80C - holds full page Halfpage 4 80C - holds full page Full page 5 80B - holds Half a page Fullpage 6 80B - holds Half a page Half page

In case 1 (transition 84A), system 20 stores a full page of data in theword line using LSB programming. The word line at this stage is referredto as LSB programmed, i.e., at state 80C.

In case 2 (transition 84B), system 20 stores half a page into theun-programmed word line. In an example embodiment, the system stores thehalf page by applying LSB programming to half of the memory cells in theword line, while half of the memory cells remain un-programmed. Thesystem may choose which memory cells to program at this stage in anydesired manner, such as a physically contiguous half of the word line(e.g., first or last 50% of the memory cells in the word line), theodd-order memory cells, the even-order memory cells, or any othersuitable subset that includes half of the memory cells. The choice ofmemory cells may have an effect on the level and predictability ofcell-to-cell interference. The word line at this stage is referred to asHLSB programmed, i.e., at state 80B.

Typically, each memory cell in the subset that is programmed in case 2is paired with a respective memory cell that is not programmed. The useof this pairing will be explained below. In an embodiment, theprogramming operation of case 2 sets the programming levels of thememory cells in a given pair according to the following table:

HLSB value Programming levels “0” L0, L0 “1” L0, L1wherein L0 and L1 refer to the programming levels shown in FIG. 2 above.

In case 3 (transition 84C), the word line already holds a full page,i.e., it is LSB programmed. The system stores an additional half a page(HMSB) in this word line, resulting in a word line that is LSB+HMSBprogrammed, i.e., reaching state 80D. In an embodiment, the programmingoperation of case 3 programs an additional bit into each pair ofLSB-programmed memory cells in the word line. In an example embodiment,the programming operation of case 3 sets the programming levels of thememory cells in a given pair according to the following table:

HMSB value Current LSB values “0 “1 “00” L0, L0 L0, L2 “01” L0, L1 L2,L1 “10” L1, L0 L2, L0 “11” L1, L1 L1, L2

For example, if a given pair of memory cells is programmed to “0” and“1” LSB values, respectively, and the HMSB value to be programmed is“1”, then the programming operation of case 3 will program the pair ofmemory cells to programming levels L2, L1, respectively.

In case 4 (transition 84D), the word line already holds a full page,i.e., it is LSB programmed, and an additional full page is buffered forstorage. In this case, the system programs half of the buffered page inthe given word line (resulting in a LSB+HMSB programmed word line). Thesystem programs the other half of the buffered page in another wordline, e.g., the next word line in the array. In an embodiment, theprogramming operation of case 4 programs half a page in the given wordline using the programming operation of case 3 above. The other halfpage is programmed in the other word line depending on the state of thatother word line, e.g., using the programming operation of case 2, 3 or6.

In case 5 (transition 84E), the given word line already holds half apage (HLSB programmed). The system stores an additional full page (MSB)in this word line on top of the existing half page. In accordance withthe above-described embodiment, the memory cells of the HLSB-programmedword line are paired. Within each pair, one memory cell isLSB-programmed and the other memory cell is un-programmed. In anembodiment, the programming operation of case 5 stores two additionalbits in each such pair of memory cells.

In one embodiment, the programming operation of case 5 sets theprogramming levels of the memory cells in a given pair according to thefollowing table:

MSB values Current programming levels “00” “01” “10” “11” L0, L0 L0, L0L2, L0 L1, L0 L0, L2 L0, L1 L0, L1 L0, L2 L1, L1 L1, L2

The programming operation of case 5 programs each pair of memory cells,one of which is un-programmed and the other LSB-programmed, to eightpossible levels. Thus, after the programming operation of case 5, eachpair of memory cells holds three bits. For example, if the pair of cellswas at programming levels L0, L1, and the new bits to be stored are both“1”, then the programming operation sets the pair of memory cells toprogramming levels L1, L2, respectively.

In case 6 (transition 84F), the word line already holds half a page(HLSB programmed). The system stores another half page in this wordline, resulting in a LSB-programmed word line. The programming operationof case 6 may program the additional half page in various manners. Inone embodiment, the memory cells in the HLSB-programmed word line arepaired. In each pair, one memory cell is LSB-programmed and the other isun-programmed (e.g., following programming using case 2 above). In thisembodiment, the programming operation of case 6 stores a bit in eachun-programmed memory cell by applying LSB programming.

In an alternative embodiment, the new half page can be buffered untilanother half page is accepted for storage from host 52. Then, the twohalf pages are stored using the programming operation of case 5 above.This scheme may be advantageous since it reduces the wearing of the wordline by programming it once instead of twice. Further alternatively, themapping of bit values to programming levels can be defined such thatcase 6 does not occur.

The above-described state model, mapping tables and programmingoperations are shown purely by way of example. In alternativeembodiments, any other suitable programming scheme can be used.Consider, for example, the cases where a certain page is split into twohalves and each half stored in a different word line. In such a case,the page can be split in an interleaved manner, such that the odd-orderbits are stored in one word line and the even-order bits are stored inanother word line. Splitting the page in this manner simplifies thereadout process, and in particular combining the read data from the twoword lines in order to reconstruct the original page.

In an example embodiment, bits 1,3,5,7, . . . of the original page arerespectively stored in the pairs of memory cells [1,2], [3,4], [5,6],[7,8] . . . of one word line. Bits 2,4,6,8, . . . of the original pageare stored in the pairs of memory cells [1,2], [3,4], [5,6], [7,8] . . .of another word line.

As another example, consider the embodiments in which the memory cellsin a given word line are paired, and a mapping is defined for storingdata in each pair. In some embodiments, the roles of the memory cellswithin each pair are swapped from time to time, in order to balance thestress and wearing of the memory cells. In one embodiment, role swappingin a given memory block is carried out each time the memory block iserased. Alternatively, role swapping can be performed at any othersuitable time.

Storage at a Non-Integer Number of Bits Per Memory Cell by Splitting aPartial Subset of the Programming Levels

In some embodiments, system 20 stores data in a group of analog memorycells, e.g., a word line, in two programming phases. In the first phase,the system programs the memory cells in the group to a certainpredefined set of initial programming levels. The number of initialprogramming levels is typically an integer power of two, e.g., two orfour programming levels.

In a second programming phase, additional data is stored in the group,but only in the memory cells that were programmed to a predefinedpartial subset of the initial programming levels. The second programmingphase sets at least some of these memory cells to additional programminglevels that are different from the initial programming levels.

In other words, a certain subset of the initial programming levels ispre-designated for splitting into additional programming levels in orderto store additional data. In the second programming phase, the systemidentifies the memory cells in the group that are programmed to thissubset of programming levels, and programs only these memory cells withthe additional data.

Note that the data size stored in the second phase is smaller than thedata size stored in the second phase, since the second phase programsonly a selected part of the memory cells in the group.

Typically, the total number of programming levels after the secondprogramming phase, i.e., the aggregate number of the initial andadditional programming levels, is not an integer power of two. Exampleschemes that reach an aggregate number of three, five, six, seven andnine programming levels are described below. Thus, these two-phasestorage schemes store data at a non-integer number of bits per memorycell.

FIG. 6 is a graph showing data storage using the above-describedtwo-phase process, in accordance with an example embodiment of thepresent invention. The top graph in FIG. 6 shows the threshold voltagedistribution in a group of memory cells (e.g., a word line) beforestorage begins. At this stage, all the memory cells in the group areerased, i.e., set to level L0.

In the first programming phase, a full page of data denoted B0 isprogrammed into the memory cells in the group, one bit per memory cell.The middle graph in FIG. 6 shows the threshold voltage distribution inthe group after this phase. In the present example, a B0=“0” bit valueis stored in a given memory cell by setting (retaining) the memory cellat programming level L0. A B0=“1” bit value is stored by programming thememory cell to programming level L1.

In the second programming phase, the system identifies the memory cellsthat were programmed in the first phase to programming level L1, andstores an additional half-page (denoted B1) in these memory cells. Thememory cells that were programmed in the first phase to programminglevel L0 are not programmed in the second phase.

The system stores half-page B1 by programming some of the memory cellsof programming level L1 to programming level L2, and retaining the othermemory cells of level L1 without additional programming. In the presentexample, the system stores a B1=“1” bit value in a given memory cell(that is currently at level L1) by programming the memory cell to levelL2. A B1=“0” bit value is stored by retaining the memory cell at levelL1.

The bottom graph in FIG. 6 shows the threshold voltage distribution inthe group after the second programming phase. Typically, approximately50% of the memory cells are at level L0, approximately 25% are at levelL1, and approximately 25% are at level L2. At this stage, the group ofmemory cells holds 1.5 pages (B0 and B1) at an average storage densityof 1.5 bits/cell.

The two-phase programming scheme of FIG. 6 achieves high capacity byenabling storage at a non-integer number of bits per memory cell. Thisscheme can also achieve good interference cancellation, because it canbe applied in any suitable programming order of word lines, and requiresonly modest buffering. Thus, in some embodiments the system programs atleast one neighboring word line after performing the first programmingphase, and performs the second programming phase only after theneighboring word line is at least partially programmed.

In the present example, programming level L1 is pre-designated forsplitting, and the second programming phase splits this level intolevels L1 and L2. In alternative embodiments, however, any otherprogramming level can be pre-designated for splitting. For example, thefirst programming phase may program the memory cells to levels L0 andL2, and the second programming phase may then program the memory cellsof L0 into L0 and L1. Further alternatively, the first programming phasemay program the memory cells to levels L0 and L1, and the secondprogramming phase may then program the memory cells of L0 into L0 andL2.

In alternative embodiments, the disclosed two-phase process can beimplemented, mutatis mutandis, using any suitable number of initial andadditional programming levels. Several example variations of this schemeusing various numbers of programming levels (and thus various storagecapacities) are described further below.

Referring to the example of FIG. 6, after the first programming phase,approximately 50% of the memory cells are at programming level L0 andapproximately 50% of the memory cells are at programming level L1. Insome embodiments, for example, the data is scrambled before storage andthe scrambling operation causes an approximate even distribution of “0”and “1” bit values. This 50%/50% distribution, however, is onlyapproximate, and the actual percentages of “0” and “1” bit values mayvary from one page to another.

The approximate distribution may be problematic for implementing thesecond programming phase. As noted above, the B1 half-page is storedonly in the memory cells that are at level L1. Because of theapproximate distribution, however, the number of these memory cells isnot constant. If, for example, the number of memory cells at level L1happens to be lower than 50%, the number of memory cells at level L1 maybe insufficient for storing the B1 half-page.

In some embodiments, system 20 avoids situations of this sort bypre-processing the data of the B0 page before it is stored in the firstprogramming phase.

The pre-processing ensures that at least 50% of the memory cells in thegroup will be programmed to level L1 in the first programming phase.When this condition is met, the number of memory cells in level L1 issufficient for storing the B1 half-page in the second programming phase.

(For a general number of programming levels, the pre-processing ensuresthat at least a predefined percentage of the memory cells in the groupwill be programmed in the first programming phase to the subset of theprogramming levels that are subsequently used for storing additionaldata in the second programming phase. This predefined percentagetypically corresponds to the data size stored in the second phase.)

System 20 may apply any suitable kind of pre-processing to cause atleast 50% of the memory cells in the group will be programmed to levelL1. In an example embodiment, the system counts the number of bits inthe B0 page that are to be mapped to level L1 (in the example of FIG.6—the number of B0=“1” bit values). If this number is smaller than 50%of the page size (equivalent to 50% of the number of memory cells in thegroup), the system inverts the data values of the B0 page. Afterinversion, the number of bit values that are to be mapped to level L1 isat least 50%. The system then carries out the two-phase storage processof FIG. 6.

Typically, for each group of memory cells, system 20 stores a respectiveindication of whether the bits of the B0 page were inverted or notbefore storage. The indication is referred to herein as an “inversionbit.” The system may store the inversion bit in any suitable manner andat any suitable location, either in the same group of memory cells or inanother storage location. Typically, the system stores the inversion bitusing a highly reliable storage configuration, since an error in readingthe inversion bit affects the entire data readout. When subsequentlyreading the B0 page from the group of memory cells, the system queriesthe inversion bit and, if necessary, inverts the read B0 bit values inorder to reconstruct the data correctly.

In some embodiments, the system encodes the B0 page with an ErrorCorrection Code (ECC) before storage. Typically, the pre-processing(e.g., counting of B0=“1” bit values and bit inversion) should beapplied to the bits of the ECC code words after ECC encoding, i.e., tothe actual encoded bits that will be stored in the memory cells. Inthese embodiments, the inversion bit is produced after ECC encoding, andis therefore not protected by the ECC. System 20 may solve this issue,for example, by encoding the inversion bit with a separate ECC. Theinversion bit can then be stored in a suitable storage location,typically outside the group of memory cells.

Alternatively to using an inversion bit, the system may designate acertain bit within the B0 page (before ECC encoding) and maintain thisbit at a fixed predefined bit value (e.g., “0”). This bit is encodedwith ECC together with the other bits of the B0 page. The system countsthe number of “1” bit values in the encoded bits, and, if necessary,inverts the bit values in the entire code word. The system then carriesout the storage process of FIG. 6. During data readout, following ECCdecoding, if the designated bit is found to be “1” (i.e., the inverse ofthe fixed predefined bit value), the system concludes that the entire B0page has been bit-wise inverted, and inverts all the B0 bit values. Inthis embodiment, the ECC is assumed to have the property that thebit-wise inverse of any code word is also a valid code word.

In yet another embodiment, the system applies pre-processing only to thedata bits before ECC encoding and not to the parity bits added by theECC. Since the number of parity bits is typically small relative to theoverall page size, the inaccuracy of this scheme is often tolerable. Instill another embodiment, the system checks whether the number of memorycells in level L1 is sufficient for storing the B1 half-page in thesecond programming phase. If not, the system does not program the B1half-page in this group of memory cells, and proceeds to program thenext group (e.g., the next word line).

In another embodiment, the system may scramble the data with differentscrambler seeds until successfully causing at least 50% of the B0 pagememory cells to be programmed to level L1. In another embodiment, the B1half-page size can be defined as less than 50% of the full page size, inorder to increase the probability of success. Generally, a trade-offexists between the size of the B1 half page and the probability ofsuccess in programming it. the smaller the size of the B1 half page, thehigher the probability of success.

In yet another example embodiment, the system chooses whether to programthe B1 half page into the memory cells that were programmed to level L0,or into the memory cells that were programmed to level L1. The systemthen stores an indication of this choice for subsequent decoding.

FIG. 7 is a flow chart that schematically illustrates a method for datastorage using the two-phase process of FIG. 6 above, in accordance withan embodiment of the present invention. The method begins with system 20accepting a full page (B0) for storage, at a first input step 90. Thesystem pre-processes the B0 page, at a pre-processing step 94, such thatat least 50% of the B0 bits will be programmed to programming level L1in the first programming phase. The system programs the pre-processed B0page, at a first phase programming step 98.

The system accepts a half page (B1) for storage, at a second input step102. (This step is shown after step 98 for the sake of clarity. Inalternative embodiments, the system may accept the B1 half page at anysuitable time, e.g., together with accepting the B0 page at step 90.)The system identifies the memory cells that were programmed to level L1in the first programming phase (step 98), and programs the B1 half pagein the identified memory cells, at a second phase programming step 106.

Consider a group of memory cells that was programmed with a B0 page anda B1 half page to levels L0, L1 and L2. The threshold voltagedistribution in this group is shown in the bottom graph of FIG. 6 above.In some embodiments, system 20 reads the B0 page from these memory cellsby comparing the cell threshold values to a read threshold that ispositioned between levels L0 and L1. For example, this read thresholdcan be positioned at or near 0V.

In order to read the B1 half page, the system should first identify thememory cells in which the bits of the B1 half page are stored, and thenread the B1 half page from the identified memory cells. In the presentexample, the B1 half page is stored in the memory cells that wereprogrammed to level L1 in the first programming phase, i.e., the memorycells for which the B0 bit is “1”. Thus, in some embodiments, the systemidentifies the memory cells holding the B1 half page based on the readresults of the B0 page.

Readout of the B0 page, however, typically involves some errorprobability. Any error in reading a bit of the B0 page will cause anerror in identifying the memory cells that hold the B1 half page:Erroneously reading “0” instead of “1” in the B0 page will miss a memorycell that holds a bit of the B1 half page. Erroneously reading “1”instead of “0” in the B0 page will erroneously identify a memory cell asholding a bit of the B1 half page. Events of this sort will causeerroneous insertion and deletion of bits, rather than bit value errors,in the B1 half page. Such insertion and deletion errors are typicallycomplicated to correct, and should be avoided.

For example, in some embodiments system 20 applies ECC decoding to theread B0 page before using the read results to identify the memory cellsthat hold the bits of the B1 half page. By using the error-correctedread results of the B0 page, the memory cells holding the B1 half pageare identified with improved reliability, and the probability ofintroducing insertion or deletion errors is considerably reduced.

FIG. 8 is a flow chart that schematically illustrates a method forreadout of data that was stored using the process of FIG. 7 above, inaccordance with an embodiment of the present invention. The methodbegins with system 20 reading the B0 page, at a first readout step 110.This readout step may be carried out in response to a request toretrieve the B0 page, or in preparation for retrieving the B1 half page.The system reads the B0 page by setting a read threshold in the boundaryregion between levels L0 and L1 (e.g., at or near 0V), and comparing thecell threshold voltages to the read threshold.

The system corrects read errors in the read B0 page by decoding the ECC,at an error correction step 114. Based on the error-corrected readresults of the B0 page, the system selects the subset of memory cells inwhich the B1 half page is stored, at a cell selection step 118. For theexample of FIG. 6 above, the system selects the memory cells for whichthe B0 bit value is “1”.

The system then reads the B1 half page from the selected subset ofmemory cells, at a second readout step 122. The system reads the B1 halfpage by setting a read threshold in the boundary region between levelsL1 and L2, and comparing the cell threshold voltages to the readthreshold.

The two-phase programming scheme of FIG. 6 above can be generalized in astraightforward manner to any desired number of initial and additionalprogramming levels. In the first programming phase, the memory cells areprogrammed to a certain set of initial programming levels. In the secondprogramming phase, one or more of the initial programming levels aresplit, so as to produce respective additional programming levels.

In some embodiments, the second programming phase (e.g., programming oflevel L2 in the example of FIG. 6) can be used for marking memory cellsthat suffer from high distortion. Distortion may comprise, for example,disturb noise, stuck cell values that cause programming failure,over-programming or any other kind of distortion. When the systemidentifies a certain cell as suffering from high distortion (e.g.,during programming verification), the system programs one of the memorycells in the vicinity of the distorted cell using the second programmingphase. The vicinity is defined because not every memory cell can beprogrammed in the second programming phase. The programmed cell maybelong to the same word line as the distorted cell or to another wordline.

During data readout, the cell that was programmed using the secondprogramming phase is detected, and the system regards all the memorycells in the vicinity of this cell as potentially less reliable. In anexample embodiment, the vicinity of a given cell is defined as aseparation of up to thirty-two memory cells from the given cell alongthe same word line. Alternatively, any other suitable vicinity can bedefined.

Consider, for example, a row of memory cells that are programmed in afirst programming phase to four programming levels denoted L0 . . . L3:{L0 L1 L3 L2 L0 L0 L1 L2 X L1 L2 L2 L2 L2 L3}. In this example, thememory cell marked with X suffers from high distortion. Assuming that asecond programming phase programs the memory cells from level L3 to anew level L4, a subsequent memory cell can be programmed to L4 in orderto mark this distortion. In this example, the programming levels afterthe second programming phase are {L0 L1 L3 L2 L0 L0 L1 L2 X L1 L2 L2 L2L2 L4}. The marked cell is separated by five memory cells from thedistorted cell. During readout, the cell programmed to L4 is identified,and the thirty-two cells preceding it are regarded as less reliable.

FIG. 9 is a graph showing a two-phase data storage process, inaccordance with an embodiment of the present invention. In the presentexample, the memory cells are initially programmed with two pages, tofour programming levels denoted L0, L2, L4 and L6. At this stage theaverage storage density is 2 bits/cell.

In the second programming phase, only the memory cells belonging tothree of the four levels (L0, L2 and L4) are programmed with anadditional bit. The data size stored in the second programming phase is¾ of a page. Thus, levels L0, L2 and L4 are split to produce additionalprogramming levels L1, L3 and L5, respectively. The memory cellsbelonging to level L6 are not programmed in the second programmingphase. The second programming phase stores an additional data bit in 75%of the memory cells. The two-phase storage process thus produces sevenprogramming levels, and the achieved average storage density is 2.75bits/cell. This density is very close to the theoretical upper bound ofLog₂(7)=2.81 bits/cell.

In order to guarantee a sufficient number of memory cells for the secondprogramming phase, the pre-processing stage typically ensures that atleast 75% of the memory cells will be programmed to level L0, L2 and L4.This condition can be met by using two inversion bits, one inversion bitfor each of the pages stored in the first programming phase. (In anexample pre-processing scheme, the first page is pre-processed using oneinversion bit such that no more than 50% of the memory cells will beprogrammed to L4 and L6. This result is possible since after the firstpage is programmed, there are two voltage states, one corresponding to“0” bits of the 1^(st) programmed page and the other to “1” bits. Whenthe second page is programmed, the lower voltage state splits into L0and L2 and the higher state splits into L4 and L6. Therefore, it isenough to ensure that no more than 50% of the bits of the 1^(st)programmed page will be mapped to the higher state in order to make surethat no more than 50% of the memory cells will be programmed to L4 andL6. The second page is pre-processed using another inversion bit suchthat no more than 25% of the memory cells will be programmed to L6. Thisresult is possible since during the programming of the 2^(nd) page, thehigher voltage state is split into L4 and L6 according to the data bitsof the 2^(nd) page, and therefore it is enough to ensure that no morethan 50% of the data bits of the 2^(nd) page that cause splitting of thehigher state will cause a split to L6.) The system may read the ¾ pagethat was stored in the second programming phase using ECC-corrected readresults of the other two pages, generalizing the method of FIG. 8 above.

In some embodiments, mapping of bit values to programming levels in theseven-level scheme can be defined using Gray mapping. The mapping schemeof FIG. 9, for example, meets this condition as shown in the followingtable:

¾ page of second Level LSB of first phase MSB of first phase phase L0“1” “1” “1” L1 “1” “1” “0” L2 “1” “0” “0” L3 “1” “0” “1” L4 “0” “0” “1”L5 “0” “0” “0” L6 “0” “1” N/A

In some embodiments, R/W unit 36 of memory device 24 comprises internallogic that performs LSB and MSB programming using four programminglevels. This logic typically comprises two page buffers for holding theLSB page and MSB page to be programmed. In some embodiments, this logiccan be used for implementing the seven-level programming schemesdescribed above. In particular, this logic can be used to implement thesecond programming phase in which three out of four programming levelsare split, so as to produce a total of seven final programming levels.

When performing MSB programming, the internal logic in the R/W unittypically sets for each memory cells one of three programmingverification thresholds (“PV levels”) depending on the LSB value and MSBvalue to be written into that cell. By appropriate setting of the bitvalues in the two page buffers and of the three PV levels, the systemcan cause the internal logic to carry out the splitting operation of thesecond programming phase. This action assumes that the system has accessto the two page buffers.

In an example embodiment, the R/W unit carries out MSB programming inaccordance with the following table:

LSB value MSB value PV level “1” “1” N/A “1” “0” PV0 “0” “0” PV1 “0” “1”PV2

In order to use this mechanism to implement the second programming phasedescribed above, the system sets the PV levels and the bit values in theLSB and MSB page buffers such that the R/W unit will carry out thedesired programming, i.e., split each of programming levels L0, L2 andL4 in two (FIG. 9). For example, for memory cells that should not beprogrammed in the second phase, the LSB and MSB values are set to “1”.

Consider, for example, a scheme in which the first programming phaseprograms levels L0, L1, L3 and L5. The second programming phase splitslevels L1, L3 and L5 to produce levels L2, L4 and L6, respectively. Inthis example embodiment, the system may implement the second programmingphase by setting the following bit values in the LSB and MSB pagebuffers:

Desired programming level LSB value MSB value L0 (already programmed)“1” “1” L1 (already programmed) “1” “1” L2 “1” “0” L3 (alreadyprogrammed) “1” “1” L4 “0” “0” L5 (already programmed) “1” “1” L6 “0”“1”

In these embodiments, readout of the LSB and MSB data (which wasprogrammed in the first programming phase) can be carried out usingthree read thresholds—One for reading the LSB data and two for readingthe MSB data. The additional data written in the second programmingphase is typically read using additional read thresholds and logicaloperations on the read bits.

The embodiments of FIG. 9 above referred to a scheme that produces sevenprogramming levels. The disclosed technique, however, can be used forproducing other numbers of programming levels that are not an integerpower of two. For example, the system may store data at an averagedensity of 2.5 bits/cell using a total of six programming levels. Thisdensity is very close to the theoretical upper bound of Log₂(6)=2.59bits/cell.

In such a scheme, the first programming phase stores two pages in fourinitial programming levels. In the second programming phase, two ofthese levels are split to produce two additional programming levels.Thus, the second programming phase stores an additional half page. Forpre-processing in this scheme, a single inversion bit is sufficient: Ifthe levels that are split during the 2^(nd) programming phase have bitmappings (after the 1^(st) phase, i.e., after two pages are programmed)having one bit in common, then only this bit needs to be monitored. Forexample, if the split is applied to levels whose initial mapping is “01”and “00”, then it is necessary to monitor only the left-hand-side bitand ensure that more than 50% of the cells will have this bit as “0”. Ifthe split is from states “10” and “00”, it is necessary to monitor theright-hand-side bit. However, if the split is from “01” and “10” (whichhave no bit in common), then one inversion bit is not sufficient and twoinversion bits are needed.

As yet another example, the system may store data at an average densityof 2.25 bits/cell using a total of five programming levels. This densityis close to the theoretical upper bound of Log₂(5)=2.32 bits/cell. Insuch a scheme, the first programming phase stores two pages in fourinitial programming levels. In the second programming phase, one ofthese levels is split to produce one additional programming level. Thus,the second programming phase stores an additional 1/4 page.Pre-processing in this scheme typically uses two single inversion bits.

As still another example, the system may store data at an averagedensity of 3.125 bits/cell using a total of nine programming levels.This density is very close to the theoretical upper bound ofLog₂(9)=3.17 bits/cell. In such a scheme, the first programming phasestores three pages in eight initial programming levels. In the secondprogramming phase, one of these levels is split to produce oneadditional programming level. Thus, the second programming phase storesan additional ⅛ page.

In the embodiments of FIGS. 6-9, the system programs a partial subset ofthe memory cells in the final programming phase, whereas all thepreceding phases program all the memory cells in the group. This choice,however, is made purely by way of example. In alternative embodiments,the system may program a partial subset of the memory cells at any ofthe programming phases, followed by one or more subsequent programmingphases that program all the memory cells in the group. Any such schemecan be used for achieving a number of final programming levels that isnot an integer power of two.

The programming schemes of FIGS. 6-9 are advantageous, for example,because they enable the system to use Gray mapping of bit valuecombinations to programming levels (i.e., mapping in which neighboringprogramming levels differ by only a single bit value). Gray mapping isoften difficult or impossible to achieve in known schemes that use anumber of programming levels that is not an integer power of two.

Additional Embodiments and Variations

FIG. 4 above illustrates an example programming scheme that stores dataat a density of 1.5 bits per cell by storing three bits in a pair ofmemory cells, each memory cell having three possible programming levels.The following description gives an alternative way of storing three bitsin a pair of memory cells. This alternative scheme uses four possibleprogramming levels for each memory cell, but permits only a partialsubset of the sixteen possible combinations of programming levels in thetwo cells.

FIG. 10 is a diagram that schematically illustrates a process of storingthree data pages in memory cells belonging to two word lines, inaccordance with an alternative embodiment of the present invention. Inthe present example, each of the two memory cells can be programmed toone of four possible programming levels denoted L0 . . . L3. One cellbelongs to WL1 and the other belongs to WL2. The left-hand-side of FIG.10 shows the two memory cells after LSB programming, i.e., after onememory page is stored in each WL. At this stage, each memory cell isprogrammed to either L0 or L2, according to the bit mapping shown in thefigure. The resulting four combinations of programming levels in the twomemory cells are marked with constellation points 130.

In this embodiment, an additional bit is then stored jointly in the twomemory cells, and this stage is referred to as HMSB programming. In HMSBprogramming, each programming level in each memory cell is split intotwo programming levels, depending on the HMSB bit value. The programminglevels of the two memory cells after LSB and HMSB programming are shownon the right-hand-side of the figure. The resulting eight combinationsof programming levels in the two memory cells are marked withconstellation points 134. Note that although each memory cell can beprogrammed to one of four possible levels (L0 . . . L3), only eight ofthe sixteen possible combinations of programming levels are used forLSB+HMSB programming. Thus, three bits (and not four) are stored in eachpair of memory cells.

Assuming the voltage window (the difference between the highest tolowest threshold voltages) is normalized to unity, the minimal distancebetween constellation points 134 is √{square root over (2)}/3. Thisminimal distance is slightly smaller than the minimal distance of ½achieved by the scheme of FIG. 4. However, the scheme of FIG. 10 can begeneralized to higher dimensions (larger number of memory cells) in astraightforward manner so as to achieve larger minimal distances.

For a group of n cells each having m possible programming levels, thereare m^(n) possible combinations of programming levels per group. Thepossible combinations can be diluted by a factor of two (i.e., usingonly half of the combinations) so as to increase the minimal distance bya factor of √{square root over (2)}. This kind of dilution can beapplied recursively (i.e., the constellation can be further diluted by afactor of two to gain another factor of √{square root over (2)} inminimal distance, and so on).

The dilution can be performed in any suitable manner. Example dilutionschemes are described by Wei, in “Trellis-Coded Modulation withMultidimensional Constellations,” IEEE Transactions on InformationTheory, volume IT-33, no. 4, July, 1987, pages 483-501, which isincorporated herein by reference. This technique can be used, forexample, for mapping five pages to 3 WLs, so as to achieve a storagedensity of ˜1.67 bits/cell, using four possible programming levels percell. This mapping is achieved by diluting the original 4⁵-pointconstellation by a factor of four and increasing the minimal distance bya factor of two.

As another example, seven pages can be mapped to four WLs (achieving astorage density of ˜1.75 bits/cell) by diluting the original 4⁷-pointconstellation by a factor of eight and increasing the minimal distanceby a factor of 2√{square root over (2)}. As can be seen from theseexamples, the disclosed technique allows flexibility in choosing storagedensities in the range [1.5 2], which may be difficult to achieve usingthe approach of FIG. 4.

The “level splitting” programming schemes described above focused onsplitting programming levels individually for each memory cell in asecond programming phase. This approach can be generalized to groups oftwo or more memory cells, for which the combinations of programminglevels are split. Let the term “multi-state” refer to the jointprogramming level of a group of memory cells, i.e., the combination orvector of programming levels of the memory cells in the group.

In this generalized scheme, a group of memory cells is programmed in afirst programming phase to one of several initial multi-states. In asecond programming phase, only a partial subset of the initialmulti-states are split, to produce additional multi-states that aredifferent from the initial multi-states. The total number ofmulti-states (initial and additional multi-states) following the secondprogramming phase is typically not an integer power of two. The initialmulti-states, the partial subset of the initial multi-states to besplit, and the additional multi-states, are defined jointly for themultiple memory cells in the group.

FIG. 11 is a graph showing storage of data using a non-integer number ofbits per memory cell, in accordance with an embodiment of the presentinvention. In the present example, a first memory cell in WL1 isprogrammable to one of six programming levels denoted L0 . . . L5, and asecond memory cell in WL2 is programmable to one of four programminglevels denoted L0 . . . L3. The same process is applied to the otherpairs of memory cells along WL1 and WL2.

In the first programming phase, three bits are stored in each pair ofmemory cells by programming the pair of cells to eight initialmulti-states (some of which may not belong to the final set ofmulti-states). In the second programming phase, an additional half pageis stored in each pair of cells by splitting four of the eight initialmulti-states in two. The second programming phase results in a total oftwelve final multi-states (out of the twenty four possible combinationsof programming levels in the two cells). In the present example, thefinal multi-states of the pair of memory cells are marked in the figurewith constellation points 138. Alternatively, any other suitablemulti-state constellation can be used.

Splitting multi-states of multiple cells enables higher flexibility inchoosing the desired storage density, in comparison with splittingprogramming levels of individual cells. In the example of FIG. 11, eachpair of memory cells holds 3.5 bits, i.e., a storage density of 1.75bits/cell. This approach can be extended to higher dimensions (largergroups of memory cells) in a straightforward manner. For a givendimension, the constellation of final multi-states can be chosen, forexample, as the constellation that has the highest minimum distancebetween constellation points, such as an optimal lattice. Lattices ofthis sort are described, for example, by Conway and Sloane, in “SpherePackings, Lattices and Groups,” Springer, New York, third edition, 1998,chapter 4, pages 94-131, which is incorporated herein by reference. Thetwo-dimensional 12-point constellation of FIG. 11, for example, isderived from a two-dimensional hexagonal lattice that is shown on page110 of this book. Alternatively, the constellation of final multi-statescan be chosen using any other suitable criterion.

Some of the embodiments described herein refer mainly to system 20 or tomemory controller 40 as carrying out the disclosed techniques. Thischoice, however, is made purely by way of example. Alternatively, thedisclosed techniques can be carried out by R/W unit 36 in the memorydevice, or jointly by the memory controller and R/W unit. Any suitablepartitioning of functions between the memory controller and the R/W unitcan be used.

Although the embodiments described herein mainly address storageapplications, the methods and systems described herein can also be usedin other applications, such as in communication systems. For example,when using Pulse Amplitude Modulation (PAM) or Quadrature AmplitudeModulation (QAM), the disclosed techniques can be used for mapping bitsto symbols in a communication packet or message, for a constellationwhose size is not an integer power of two.

It will thus be appreciated that the embodiments described above arecited by way of example, and that the present invention is not limitedto what has been particularly shown and described hereinabove. Rather,the scope of the present invention includes both combinations andsub-combinations of the various features described hereinabove, as wellas variations and modifications thereof which would occur to personsskilled in the art upon reading the foregoing description and which arenot disclosed in the prior art. Documents incorporated by reference inthe present patent application are to be considered an integral part ofthe application except that to the extent any terms are defined in theseincorporated documents in a manner that conflicts with the definitionsmade explicitly or implicitly in the present specification, only thedefinitions in the present specification should be considered.

1. An apparatus, comprising: a memory including a plurality ofmulti-level cells for data storage; storage circuitry coupled to thememory, wherein the storage circuitry is configured to: receive data forstorage in the memory; store the received data in one or more of theplurality of multi-level cells using one or more programming levels of aplurality of programming levels; determine that at least a firstmulti-level cell is subject to distortion; and program a secondmulti-level cell with a predetermined programming level of the pluralityof programming levels in response to determining the first multi-levelcell is subject to distortion.
 2. The apparatus of claim 1, wherein theplurality of multi-level cells is arranged in a plurality of rows,wherein each row of the plurality of rows is associated with arespective word line.
 3. The apparatus according to claim 2, wherein thesecond multi-level cell is associated with a common wordline associatedwith the first multi-level cell.
 4. The apparatus according to claim 2,wherein the second multi-level cell is associated with another wordline,adjacent to a wordline associated with the first multi-level cell. 5.The apparatus according to claim 1, wherein the storage circuitry isfurther configured to utilize the predetermined programming level toprogram one or more selected multi-level cells, including the secondmulti-level cell, solely to indicate that one or more associatedmulti-level cells, including the first multi-level cell, is subject todistortion.
 6. The apparatus according to claim 1, wherein thedistortion includes disturb noise from multi-level cells adjacent to thefirst multi-level cell.
 7. The apparatus according to claim 1, whereinto determine that at least the first multi-level cell is subject todistortion, the storage circuitry is further configured to determinethat at least the first multi-level cell is stuck at a given programminglevel.
 8. A method for data storage, comprising: receiving data forstorage in a memory, wherein the memory includes a plurality ofmulti-level cells for data storage; storing the received data in one ormore multi-level cells using one or more programming levels of aplurality of programming levels; determining at least a firstmulti-level cell is subject to distortion; and programming a secondmulti-level cell with a predetermined programming level of the pluralityof programming levels responsive to determining the first multi-levelcell is subject to distortion.
 9. The method according to claim 8,wherein the plurality of multi-level cells is arranged in a plurality ofrows, wherein each row of the plurality of rows is associated with arespective word lines.
 10. The method according to claim 9, wherein thesecond multi-level cell is associated with a common wordline associatedwith the first multi-level cell.
 11. The method according to claim 9,wherein the second multi-level cell is associated with another wordline,adjacent to a wordline associated with the first multi-level cell. 12.The method according to claim 8, further comprising utilizing thepredetermined programming level to program one or more selectedmulti-level cells, including the second multi-level cell, solely toindicate that one or more associated multi-level cells, including thefirst multi-level cell, is subject to distortion.
 13. The methodaccording to claim 8, wherein determining that at least the firstmulti-level cell is subject to distortion comprises determining that atleast the first multi-level cell is stuck at a given programming level.14. The method according to claim 8, wherein distortion includesover-programming of the first multi-level cell.
 15. A system comprising:a memory device including a plurality of multi-level cells for datastorage, wherein the plurality of multi-level cells is arranged in aplurality of rows, and wherein each row of the plurality of rows isassociated with a respective word line; and a host configured to senddata for storage in the memory device; wherein the memory device isconfigured to: receive the data for storage in one or more of theplurality of multi-level cells; store the received data in the one ormore of the plurality of multi-level cells using one or more programminglevels of a plurality of programming levels; and program a secondmulti-level cell with a predetermined programming level of the pluralityof programming levels responsive to determining the first multi-levelcell is subject to distortion.
 16. The system according to claim 15,wherein the second multi-level cell is associated with a common wordlineassociated with the first multi-level cell.
 17. The system according toclaim 15, wherein the second multi-level cell is associated with anotherwordline, adjacent to a wordline associated with the first multi-levelcell.
 18. The system according to claim 15, wherein the memory device isfurther configured to utilize the predetermined programming level toprogram one or more selected multi-level cells, including the secondmulti-level cell, solely to indicate that one or more associatedmulti-level cells, including the first multi-level cell, is subject todistortion.
 19. The system according to claim 15, wherein distortionincludes over-programming of the first multi-level cell.
 20. The systemaccording to claim 15, wherein to determine that at least the firstmulti-level cell is subject to distortion, the memory device is furtherconfigured to determine that at least the first multi-level cell isstuck at a given programming level.